Avalanche Technology and UMC Announce 22nm Production of …
Based on Avalanche Technology’s latest generation of Spin Transfer Torque Magnetoresistive RAM (STT-MRAM) technology, this much anticipated third generation product platform offers significant density, endurance, reliability and power benefits over existing non-volatile solutions.
Deepening Its Aerospace & Defense Focus ... - Avalanche …
Aug 26, 2024 · Avalanche’s Perpendicular STT-MRAM technology is the frontrunner to replace traditional Flash and SRAM for unified memory architectures in future SOC systems, delivering high performance and low power with a path to continued scalability.
New 1Gb MRAM Offers the Highest Density of Hi ... - Avalanche Technology
Avalanche’s next-gen 22nm Perpendicular Spin Transfer Torque MRAM technology has enabled Micross to provide greater SWaP savings through the addition of our 1Gb Hermetic MRAM to Micross’ hi-reliability memory portfolio.
Avalanche STT-MRAM achieves the operation immunity field of up to 700 Oe and standby immunity field of up to 1000 Oe with less than sub-ppm raw error rate impact.
Datasheets Gen 3 - Avalanche Technology
Gen 3 Datasheets. Gen 3 Development Kits. Gen 3 Drivers, Models, & Notes. Quality.
Avalanche Samples MRAM - The Memory Guy Blog
Jul 1, 2015 · Today Avalanche Technology announced that it is sampling MRAM, making it the world’s second company to actually produce this much-researched technology.
Avalanche announces pre-production of its Gen-3 Space Grade ... - MRAM …
Jan 10, 2023 · pMTJ STT-MRAM developer Avalanche Technology announced that its Gen-3 Space Grade Dual QSPI solution is now available in pre-production. The devices are based on the company's latest generation STT-MRAM technology.
Avalanche Technology Announces Industry’s First 1Gb STT-MRAM …
Avalanche's 1Gb Space Grade MRAM simplifies system design by unifying the memory architecture, thereby reducing power & size, and improving overall system reliability & life.
Feb 5, 2020 · The ASV016204 is a pre-production sample (received from Avalanche Technology) of a 16Mb, 40nm serial non-volatile memory packaged in a SOIC-16 package. It uses Avalanche’s proprietary perpendicular magnetic tunnel junction (pMTJ) Spin Torque Transfer Magnetic Random Access Memory (STT-MRAM) technology. 2.2.
Avalanche Technology Announces Family of STT-MRAM for …
Oct 13, 2021 · Avalanche Technology Inc. is the leader in next generation Perpendicular STT-MRAM technology, accepted as the front-runner to replace traditional Flash and SRAM for unified memory architectures in future SOC systems, delivering high performance and low power at 55, 40, 28 and 22nm, with scalability to 14nm.