The SOT‐induced magnetization switching was first discovered in ferromagnetic semiconductor GaMnAs [9, 10]. Because of the coexistence of Rashba and Dresselhaus spin‐orbit coupling (SOC) in GaMnAs ...
However, a read-before-write operation is required to use the toggle SOT-MRAM for directional switching, which threatens to increase the write delay. To resolve these issues, we propose a high-speed ...