A Germany-based global semiconductor leader has developed the the world’s first 300 mm power gallium nitride (GaN) wafer ...

Silicon Germanium Low Noise Amplifier for LTE. Summary of Features: - Insertion power gain: 13.3 dB. - Low noise figure: 0.90 dB. - Low current consumption: 4.4 mA. - Operating frequencies: 728 - 960 ...

The Leonidas system is described as a "Solid-state, high-power HPM system, utilizing Gallium Nitride (GaN) semiconductors for ...

RFHIC specializes in designing and manufacturing gallium nitride (GaN) transistors, which exhibit excellent thermal stability, high efficiency, high power and a compact form factor. Combining ...

Qorvo's SGL0622Z is a high performance 5 MHz to 4000 MHz low power high gain and fully internally matched SiGe LNA designed for 2.7V to 3.6V operation. The application circuit is the simplest of the ...

GaN-on-Si MMIC LNA with Fast Recovery Time: Utilizing MACOM’s proprietary 100 nm GaN-on-Si technology, these LNAs offer exceptional ruggedness, low noise figures and rapid recovery times ...

065TSMC_LNA_09 is used to amplify signal from the radio receiver input in band up to 150MHz. LNA has a low noise figure, high linearity and wide gain tuning range. LNA consists of three stages. ...

Gallium nitride (GaN) semiconductors can now be grown without ammonia, a toxic chemical that needs a sophisticated detoxifying system before it can be released into the atmosphere. The new ...

With proprietary LNA™ technology, the miRCURY™ LNA™ miRNA PCR System takes your qPCR experiments to the next level: The miRCURY™ LNA™ miRNA PCR System is perfectly suited for liquid biopsies.

It features MACOM’s XP1044 driver amplifier and MACP-011113 surface mount directional coupler. GaN-on-Si MMIC LNA with Fast Recovery Time: Utilizing MACOM’s proprietary 100 nm GaN-on-Si technology, ...