Silicon Germanium Low Noise Amplifier for LTE. Summary of Features: - Insertion power gain: 13.3 dB. - Low noise figure: 0.90 dB. - Low current consumption: 4.4 mA. - Operating frequencies: 728 - 960 ...

A Germany-based global semiconductor leader has developed the the world’s first 300 mm power gallium nitride (GaN) wafer ...

The Leonidas system is described as a "Solid-state, high-power HPM system, utilizing Gallium Nitride (GaN) semiconductors for ...

Qorvo's SGL0622Z is a high performance 5 MHz to 4000 MHz low power high gain and fully internally matched SiGe LNA designed for 2.7V to 3.6V operation. The application circuit is the simplest of the ...

RFHIC specializes in designing and manufacturing gallium nitride (GaN) transistors, which exhibit excellent thermal stability, high efficiency, high power and a compact form factor. Combining ...

065TSMC_LNA_09 is used to amplify signal from the radio receiver input in band up to 150MHz. LNA has a low noise figure, high linearity and wide gain tuning range. LNA consists of three stages. ...

GaN-on-Si MMIC LNA with Fast Recovery Time: Utilizing MACOM’s proprietary 100 nm GaN-on-Si technology, these LNAs offer exceptional ruggedness, low noise figures and rapid recovery times ...

The array combines Locked Nucleic Acid (LNA ™)-modified capture probes and the xMAP ® multiplexing bead technology. Incorporation of LNA in the array capture probes greatly increases their ...

Gallium nitride (GaN) semiconductors can now be grown without ammonia, a toxic chemical that needs a sophisticated detoxifying system before it can be released into the atmosphere. The new ...

With proprietary LNA™ technology, the miRCURY™ LNA™ miRNA PCR System takes your qPCR experiments to the next level: The miRCURY™ LNA™ miRNA PCR System is perfectly suited for liquid biopsies.

It features MACOM’s XP1044 driver amplifier and MACP-011113 surface mount directional coupler. GaN-on-Si MMIC LNA with Fast Recovery Time: Utilizing MACOM’s proprietary 100 nm GaN-on-Si technology, ...